PART |
Description |
Maker |
UPD444016LG5-A10-7JF UPD444016LG5-A12-7JF UPD44401 |
256K X 16 STANDARD SRAM, 8 ns, PDSO44 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT 4分位CMOS快速静态存储器256K字由16
|
NEC, Corp. NEC Corp. NEC[NEC]
|
UPD434016AG5 UPD434016AG5-12-7JF UPD434016AG5-15-7 |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
|
NEC[NEC]
|
AS7C4098 AS7C34098-15TC AS7C34098-15TCN AS7C34098- |
High Speed CMOS Logic Quad 2-Input Schmitt-Triggered NAND Gates 14-SOIC -55 to 125 5V/3.3V 256K x 16 CMOS SRAM 5V/3.3V 256K × 16 CMOS SRAM 5V/3.3V 256K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44 5V/3.3V 256K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44 Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-SSOP -40 to 85 Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85 Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 Octal Buffers/Drivers With 3-State Outputs 20-SSOP -40 to 85 Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85 Octal Buffers/Drivers With 3-State Outputs 20-TVSOP -40 to 85 SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
IDT71V256SB20Y IDT71V256 IDT71V256SB IDT71V256SB12 |
3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) 32K X 8 CACHE TAG SRAM, 12 ns, PDSO28
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
MCM6929A MCM6929AWJ10 MCM6929AWJ10R MCM6929AWJ12 M |
256K x 4 Bit Fast Static Random Access Memory 256K X 4 STANDARD SRAM, 10 ns, PDSO32
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc] MOTOROLA INC
|
IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) 3.3V, 32K X 8 Static RAM
|
Integrated Device Technology IDT
|
K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs 256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE 256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE 256K (32768 words X 8 bits) SRAM Control Pins: OE and CE 256K (32768 words 8 bits) SRAM Control Pins: OE and CE SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC From old datasheet system
|
Intersil Sanyo Semiconductor Corp SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
UPD444016G5-12-7JF UPD444016LE-10 UPD444016LE-12 U |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
MB81C84A |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|